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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2719AGR
SWITCHING
P-CHANNEL POWER MOS FET
DESCRIPTION
PACKAGE DRAWING (Unit: mm)
The μ PA2719AGR is P-Channel MOS Field Effect
Transistor designed for power management applications of
notebook computers and Lithium-Ion battery protection
circuit.
8
5
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8 : Drain
FEATURES
1
4
6.0 ±0.3
? Low on-state resistance
5.37 MAX.
4.4
0.8
R DS(on)1 = 13 m Ω MAX. (V GS = ? 10 V, I D = ? 5.0 A)
R DS(on)2 = 20.9 m Ω MAX. (V GS = ? 4.5 V, I D = ? 5.0 A)
0.40
0.12 M
? Low input capacitance
C iss = 2010 pF TYP.
? Built-in gate protection diode
1.27 0.78 MAX.
+0.10
–0.05
0.5 ±0.2
0.10
? Small and surface mount package (Power SOP8)
ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C, All terminals are connected.)
Drain to Source Voltage (V GS = 0 V)
V DSS
? 30
V
Gate to Source Voltage (V DS = 0 V)
V GSS
m 20
V
EQUIVALENT CIRCUIT
Drain Current (pulse)
Total Power Dissipation
Total Power Dissipation
Drain Current (DC)
Note1
Note2
Note3
I D(DC)
I D(pulse)
P T1
P T2
m 10
m 100
2
2
A
A
W
W
Gate
Drain
Body
Diode
Channel Temperature
T ch
150
° C
Storage Temperature
Single Avalanche Current
Single Avalanche Energy
Note4
Note4
T stg
I AS
E AS
? 55 to +150
? 10
10
° C
A
mJ
Gate
Protection
Diode
Source
2. Mounted on ceramic substrate of 1200 mm x 2.2 mm
Notes 1. PW ≤ 10 μ s, Duty Cycle ≤ 1%
2
3. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm, PW = 10 sec
4. Starting T ch = 25 ° C, V DD = ? 15 V, R G = 25 Ω , L = 100 μ H, V GS = ? 20 → 0 V
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G19281EJ1V0DS00 (1st edition)
Date Published May 2008 NS
Printed in Japan
2008
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